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Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
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Methodology and Test Structures for Studying β-Ga ₂ O ₃ Dielectric and Contact Interfaces

https://doi.org/10.1109/ICMTS63811.2025.11068900

Gruszecki, A A; Roy, J; Agrawal, K S; La_Torraca, P; Cherkaoui, K; Hurley, P K; Wallace, R M; Young, C D (March 2025, IEEE)

Free, publicly-accessible full text available March 24, 2026
Performance and Reliability Comparison of ZnO and IGZO Thin-Film Transistors and Inverters Fabricated at a Maximum Process Temperature of 115 °C

https://doi.org/10.1109/TED.2019.2931635

Rodriguez-Davila, R. A.; Mejia, I.; Chapman, R. A.; Young, C. D.; Quevedo-Lopez, M. (September 2019, IEEE Transactions on Electron Devices)

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Schottky Barrier Height Tuning on Platinum-gated ZnO Metal-Semiconductor Field Effect Transistors by In-Situ Surface Modification

Rodriguez-Davila, R. A.; Chapman, R. A.; Mejia, I.; Quevedo-Lopez, M. A.; Young, C. D. (December 2018, 2018 IEEE Semiconductor Interface Specialist Conference (SISC))

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Contact Engineering for Dual-Gate MoS2 Transistors with O2 Plasma Exposure

Bolshakov, P.; Smyth, C. M.; Khosravi, A.; Zhao, P.; Azcatl, A.; Mirabelli, G.; Hurley, P. K.; Hinkle, C. L.; Wallace, R. M.; and Young, C. D. (December 2018, IEEE Semiconductor Interface Specialist Conference (SISC))

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